Each beneficiary must ensure open access (free of charge online access for any user) to all peer reviewed scientific publications relating to its results.


Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field M. Manca, G. Wang, T. Kuroda, S. Shree, A. Balocchi, P. Renucci, X. Marie, M. V. Durnev, M. M. Glazov, K.Sakoda, T. Mano, T. Amand, and B. Urbaszek, Appl. Phys. Lett. 112, 142103 (2018); doi: 10.1063/1.5024619 arXiv:1802:00692v2

Exciton States in Monolayer MoSe2 and MoTe2 Probed by Upconversion Spectroscopy B. Han, C. Robert, E. Courtade, M. Manca, S. Shree, T. Amand, P. Renucci, T. Taniguchi, K. Watanabe, X. Marie, L. E. Golub, M. M. Glazov, and B. Urbaszek, Physical Review X, 8, 031073 (2018)

Observation of exciton-phonon coupling in MoSe2 monolayers, S. Shree, M. Semina, C. Robert, B Han, T. Amand, A. Balocchiet, M. Manca, E. Courtade, X. Marie, T. Taniguchi, K. Watanabe, M. M. Glazov, B. Urbaszek, Phys. Rev. B (2018) DOI: 10.1103/PhysRevB.98.035302 arXiv:1804.06340

Resonance fluorescence from an atomic-quantum-memory compatible single photon source based on GaAs droplet quantum dots Laxmi Narayan Tripathi, Yu-Ming He, Łukasz Dusanowski, Piotr Andrzej Wroński, Chao-Yang Lu, Christian Schneider, and Sven Höfling, Appl. Phys. Lett. 113, 021102 (2018) DOI:


Interlayer excitons in bilayer MoS2 with strong oscillator strength up to room temperature Iann C. Gerber, Emmanuel Courtade, Shivangi Shree, Cedric Robert, Takashi Taniguchi, Kenji Watanabe, Andrea Balocchi, Pierre Renucci, Delphine Lagarde, Xavier Marie, and Bernhard Urbaszek, Physical Review B 99, 035443 (2019)

Correlations between Optical Properties and Voronoi-Cell Area of Quantum Dots Matthias C. Loebl, Liang Zhai, Jan-Philipp Jahn, Julian Ritzmann, Yongheng Huo,AndreasD. Wieck, Oliver G. Schmidt, Arne Ludwig, Armando Rastelli, and Richard J. Warburton, arXiv:1902.10145 (2019)

Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution F. Basso Basset, S. Bietti, A. Tuktamyshev, S. Vichi, E. Bonera, and S. Sanguinetti, J. Appl. Phys. 126, 024301 (2019); (pre-print version present in arXiv)

Revealing exciton masses and dielectric properties of monolayer semiconductors with high magnetic fields M. Goryca,J.Li, A.V. Stier, T. Taniguchi, K. Watanabe, E. Courtade, S. Shree, C. Robert,B. Urbaszek, X. Marie and S.A. Crooker, Nature Communication 10:4172

Accessing high optical quality of MoS2 monolayers grown by chemical vapor deposition, arXiv2019 Shivangi Shree, Antony George, Tibor Lehnert, Christof Neumann, Meryem Benelajla, Cedric Robert, Xavier Marie, Kenji Watanabe, Takashi Taniguchi, Ute Kaiser, Bernhard Urbaszek, Andrey Turchanin, arXiv:1907.03342

III-V Ternary Nanowires on Si Substrates: Growth, Characterization and Device Applications, Giorgos Boras, Xuezhe Yu, Huiyun Liu, Journal of Semiconductors, 2019, 40(10) doi: 10.1088/1674-4926/40/10/101301

Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates, Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti, Shiro Tsukamoto and Stefano Sanguinetti, Scientific Reports volume 9, 14520 (2019)

Theory of the circulating current of a single magnetic impurity in a semiconductor, Conference proceeding,  APS Meeting Abstracts 2019 A.R. da Cruz and M.E. Flatté,

Probing the local electronic structure of isovalent Bi atoms in InP arXiv preprint arXiv:1906.01790 2019 C. M. Krammel, A. R. da Cruz, M. E. Flatté, M. Roy, P. A.Maksym, L. Y. Zhang, K. Wang, Y. Y. Li, S. M. Wang, P. M. Koenraad

Enhanced light-matter interaction in an atomically thin semiconductor coupled with dielectric nano-antennas, Nature Communications 10, 5119 (2019), L. Sortino, P. G. Zotev, J. Cambiasso, S. Mignuzzi, D. Schmidt, A.Genco, M. A_mann, M. Bayer, S. A. Maier, R. Sapienza, A. I. Tartakovskii

Correlations between optical properties and Voronoi-cell area of quantum dots  Matthias C. Löbl, Liang Zhai, Jan-Philipp Jahn, Julian Ritzmann, Yongheng Huo, Andreas D. Wieck, Oliver G. Schmidt, Arne Ludwig, Armando Rastelli, and Richard J. Warburton Phys. Rev. B 100, 155402 (2019) doi: 10.1103/PhysRevB.100.155402


High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots Sergio Bietti , Francesco Basso Basset , Artur Tuktamyshev, Emiliano Bonera, Alexey Fedorov, and Stefano Sanguinetti, Scentific Reports 10, 6532 (2020)

Low-Noise GaAs Quantum Dots for Quantum Photonics  Liang Zhai, Matthias C Löbl, Giang N Nguyen, Julian Ritzmann, Alisa Javadi, Clemens Spinnler, Andreas D Wieck, Arne Ludwig, Richard J Warburton arXiv preprint arXiv:2003.00023 (2020)

Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition, I. Paradisanos, S. Shree, A. George, N. Leisgang, C. Robert, K. Watanabe, T. Taniguchi, R. Warburton, A. Turchainin Nature Communications, 11, 2391 (2020),

Dielectric Nanoantennas for Strain Engineering in Atomically Thin Two-Dimensional SemiconductorsL. Sortino, M. Brooks, P. G. Zotev, et al.  ACS Photonics. (2020)  

Shape-Dependent Stark Shift and Emission-Line Broadening of Quantum Dots and Rings Christian Heyn,* Leonardo Ranasinghe, Michael Zocher, and Wolfgang Hansen, The Journal of Physical Chemestry C,