Publications
Each beneficiary must ensure open access (free of charge online access for any user) to all peer reviewed scientific publications relating to its results.
2018
Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field M. Manca, G. Wang, T. Kuroda, S. Shree, A. Balocchi, P. Renucci, X. Marie, M. V. Durnev, M. M. Glazov, K.Sakoda, T. Mano, T. Amand, and B. Urbaszek, Appl. Phys. Lett. 112, 142103 (2018); doi: 10.1063/1.5024619 arXiv:1802:00692v2
Exciton States in Monolayer MoSe2 and MoTe2 Probed by Upconversion Spectroscopy B. Han, C. Robert, E. Courtade, M. Manca, S. Shree, T. Amand, P. Renucci, T. Taniguchi, K. Watanabe, X. Marie, L. E. Golub, M. M. Glazov, and B. Urbaszek, Physical Review X, 8, 031073 (2018)
Observation of exciton-phonon coupling in MoSe2 monolayers, S. Shree, M. Semina, C. Robert, B Han, T. Amand, A. Balocchiet, M. Manca, E. Courtade, X. Marie, T. Taniguchi, K. Watanabe, M. M. Glazov, B. Urbaszek, Phys. Rev. B (2018) DOI: 10.1103/PhysRevB.98.035302 arXiv:1804.06340
Resonance fluorescence from an atomic-quantum-memory compatible single photon source based on GaAs droplet quantum dots Laxmi Narayan Tripathi, Yu-Ming He, Łukasz Dusanowski, Piotr Andrzej Wroński, Chao-Yang Lu, Christian Schneider, and Sven Höfling, Appl. Phys. Lett. 113, 021102 (2018) DOI: https://doi.org/10.1063/1.5034402
2019
Interlayer excitons in bilayer MoS2 with strong oscillator strength up to room temperature Iann C. Gerber, Emmanuel Courtade, Shivangi Shree, Cedric Robert, Takashi Taniguchi, Kenji Watanabe, Andrea Balocchi, Pierre Renucci, Delphine Lagarde, Xavier Marie, and Bernhard Urbaszek, Physical Review B 99, 035443 (2019
Correlations between Optical Properties and Voronoi-Cell Area of Quantum Dots Matthias C. Loebl, Liang Zhai, Jan-Philipp Jahn, Julian Ritzmann, Yongheng Huo,AndreasD. Wieck, Oliver G. Schmidt, Arne Ludwig, Armando Rastelli, and Richard J. Warburton, arXiv:1902.10145 (2019
Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution F. Basso Basset, S. Bietti, A. Tuktamyshev, S. Vichi, E. Bonera, and S. Sanguinetti, J. Appl. Phys. 126, 024301 (2019); https://doi.org/10.1063/1.5097277126 (pre-print version present in arXiv)
Revealing exciton masses and dielectric properties of monolayer semiconductors with high magnetic fields M. Goryca,J.Li, A.V. Stier, T. Taniguchi, K. Watanabe, E. Courtade, S. Shree, C. Robert,B. Urbaszek, X. Marie and S.A. Crooker, Nature Communication 10:4172 https://doi.org/10.1038/s41467-019-12180
Accessing high optical quality of MoS2 monolayers grown by chemical vapor deposition, arXiv2019 Shivangi Shree, Antony George, Tibor Lehnert, Christof Neumann, Meryem Benelajla, Cedric Robert, Xavier Marie, Kenji Watanabe, Takashi Taniguchi, Ute Kaiser, Bernhard Urbaszek, Andrey Turchanin, arXiv:1907.03342
III-V Ternary Nanowires on Si Substrates: Growth, Characterization and Device Applications, Giorgos Boras, Xuezhe Yu, Huiyun Liu, Journal of Semiconductors, 2019, 40(10) doi: 10.1088/1674-4926/40/10/101301
Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates, Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti, Shiro Tsukamoto and Stefano Sanguinetti, Scientific Reports volume 9, 14520 (2019)
Theory of the circulating current of a single magnetic impurity in a semiconductor, Conference proceeding, APS Meeting Abstracts 2019 A.R. da Cruz and M.E. Flatté, https://meetings.aps.org/Meeting/MAR19/Session/A39.5
Probing the local electronic structure of isovalent Bi atoms in InP arXiv preprint arXiv:1906.01790 2019 C. M. Krammel, A. R. da Cruz, M. E. Flatté, M. Roy, P. A.Maksym, L. Y. Zhang, K. Wang, Y. Y. Li, S. M. Wang, P. M. Koenraad https://arxiv.org/abs/1906.01790
Enhanced light-matter interaction in an atomically thin semiconductor coupled with dielectric nano-antennas, Nature Communications 10, 5119 (2019), L. Sortino, P. G. Zotev, J. Cambiasso, S. Mignuzzi, D. Schmidt, A.Genco, M. A_mann, M. Bayer, S. A. Maier, R. Sapienza, A. I. Tartakovskii
Correlations between optical properties and Voronoi-cell area of quantum dots Matthias C. Löbl, Liang Zhai, Jan-Philipp Jahn, Julian Ritzmann, Yongheng Huo, Andreas D. Wieck, Oliver G. Schmidt, Arne Ludwig, Armando Rastelli, and Richard J. Warburton Phys. Rev. B 100, 155402 (2019) doi: 10.1103/PhysRevB.100.155402
(2020)
High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots Sergio Bietti , Francesco Basso Basset , Artur Tuktamyshev, Emiliano Bonera, Alexey Fedorov, and Stefano Sanguinetti, Scentific Reports 10, 6532 (2020)
Low-Noise GaAs Quantum Dots for Quantum Photonics Liang Zhai, Matthias C Löbl, Giang N Nguyen, Julian Ritzmann, Alisa Javadi, Clemens Spinnler, Andreas D Wieck, Arne Ludwig, Richard J Warburton, Nature Communications, 11,1445 (2020) http://doi.org/10.1038/s41467-020-18625-z
Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition, I. Paradisanos, S. Shree, A. George, N. Leisgang, C. Robert, K. Watanabe, T. Taniguchi, R. Warburton, A. Turchainin Nature Communications, 11, 2391 (2020),
Dielectric Nanoantennas for Strain Engineering in Atomically Thin Two-Dimensional Semiconductors. L. Sortino, M. Brooks, P. G. Zotev, et al. ACS Photonics. (2020) http://doi.org/10.1021/acsphotonics.0c00294
Shape-Dependent Stark Shift and Emission-Line Broadening of Quantum Dots and Rings Christian Heyn, Leonardo Ranasinghe, Michael Zocher, and Wolfgang Hansen, The Journal of Physical Chemestry C, https://dx.doi.org/10.1021/acs.jpcc.0c05043
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A, Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti, Shiro Tsukamoto, Roberto Bergamaschini, Francesco Montalenti, Stefano Sanguinetti, Nanomaterials 10(8), 1512 (2020), https://doi.org/10.3390/nano10081512
Giant Stark splitting of an exciton in bilayer MoS2, N. Leisgang, S. Shree, I. Paradisanos, L. Sponfeldner, C. Robert, D. Lagarde, A. Balocchi, K.Watanabe, T. Taniguchi, X. Marie, R. J.Warburton, I. C. Gerber and B. Urbaszek, Nature Nanotechnology (2020), https://doi.org/10.1038/s41565-020-0750-1
Unveiling the optical emission channels of monolayer semiconductor, J. Poumirol, I. Paradisanos, S. Shree, G. Agez, X. Marie, C. Robert, N. Mallet, P. R. Wiecha, G. Larrieu, V. Larrey, F. Fournel, K. Watanabe, T. Taniguchi, Au. Cuche, V. Paillard, B. Urbaszek, ACS Photonics (2020), https://doi.org/10.1021/acsphotonics.0c01175
Checked Patterned Elemental Distribution in AlGaAs Nanowires Branches via Vapor-Liquid-Solid Growth, Giorgos Boras, Xuezhe Yu, H. Aruni Fonseka, Dong Zhang, Haotian Zeng, Ana M. Sanchez, Huiyun Liu, Nanoscale 2020, 12, 15711-15720, https://doi.org/10.1039/D0NR02577A
Large-range frequency tuning of a narrow-linewidth quantum emitter, Liang Zhai, Matthias C Löbl, Jan-Philipp Jahn, Yongheng Huo, Philipp Treutlein, Oliver G Schmidt, Armando Rastelli, Richard J Warburton, Applied Physics Letters 117, 083106, (2020), https://doi.org/10.1063/5.0017995
Modal imaging of a laser Gaussian-beam reflected off a surface, M. Benelajla, E. Kammann, B. Urbaszek, K. Karrai, Proceedings Volume 11485, Reflection, Scattering, and Diffraction from Surfaces VII; 114850E (2020) https://doi.org/10.1117/12.2568365
Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots, R.S.R. Gajjela, A.L. Hendriks, A. Alzeidan, T.F. Cantalice, A.A. Quivy, and P.M. Koenraad, Physical Review Materials (2020) https://arxiv.org/abs/2008.11711
Fabrication of spectrally sharp Si-based dielectric resonators: combining etaloning with Mie resonances D. Toliopoulos, M. Khoury, M. Bouabdellaoui, N. Granchi, J.-B. Claude, A. Benali, I. Berbezier, D. Hannani, A. Ronda, J. Wenger, M. Bollani, M. Gurioli, S. Sanguinetti, F. Intonti, and M. Abbarchi, Opt. Express 28(25), 37734-37742 (2020)
Solid-State Dewetting Dynamics of Amorphous Ge Thin Films on Silicon Dioxide Substrates Dimosthenis Toliopoulos, Alexey Fedorov, Sergio Bietti, Monica Bollani, Emiliano Bonera, Andrea Ballabio, Giovanni Isella, Mohammed Bouabdellaoui, Marco Abbarchi, Shiro Tsukamoto, Stefano Sanguinetti, Nanomaterials 2020, 10(12), 2542; https://doi.org/10.3390/nano10122542
(2021)
Atomic-Scale Characterization of Droplet Epitaxy Quantum Dots, Raja S. R. Gajjela and Paul M. Koenraad, Nanomaterials 2021, 11(1), 85; https://doi.org/10.3390/nano11010085
Nucleation of Ga droplets self-assembly on GaAs(111)A substrates, A. Tuktamyshev, A. Fedorov, S. Bietti, S. Vichi, R. Tambone, S. Tsukamoto, S. Sanguinetti, Scientific Reports 11, 6833, DOI: 10.1038/s41598-021-86339-3
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates, A. Tuktamyshev, A. Fedorov, S. Bietti, S. Vichi, K.D. Zeuner, K.D. Jöns, D. Chrastina, S. Tsukamoto, V. Zwiller, M. Gurioli, and S. Sanguinetti, Applied Physics Letters 118, 133102, DOI: 10.1063/5.0045776
Physical origins of extreme cross-polarization extinction in confocal microscopy, M. Benelajla, E. Kammann, B. Urbaszek, and K. Karrai, Physical Review X, 11, 021007; https://doi.org/10.1103/PhysRevX.11.021007
Luminescence from Droplet-Etched GaAs Quantum Dots at and Close to Room Temperature, L. Ranasinghe, C. Heyn, K. Deneke, M. Zocher, R. Korneev and W. Hansen, Nanomaterials 11(3), 690; https://doi.org/10.3390/nano11030690
Detecting telecom single photons with (99.5+0.5⎯2.07)99.5−2.07+0.5% system detection efficiency and high time resolution, J. Chang, J. W. N. Los, J. O. Tenorio-Pearl, N. Noordzij, R. Gourgues, A. Guardiani, J. R. Zichi, S. F. Pereira, H. P. Urbach, V. Zwiller, S. N. Dorenbos, and I. Esmaeil Zadeh , APL Photonics 6, 036114 (2021) DOI: https://doi.org/10.1063/5.0039772
Self-catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates, G. Boras, X. Yu, H. Aruni Fonseka, G. Davis, A. V. Velichko, J. A. Gott, H. Zeng, S. Wu, P. Parkinson, X. Xu, D. Mowbray, A. M. Sanchez, H. Liu, Journal of Physical Chemistry C. DOI: https://doi.org/10.1021/acs.jpcc.1c03680